 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1232 DESCRIPTION *With TO-3PFa package *Complement to type 2SC3012 APPLICATIONS *Audio frequency power amplifier. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -130 -130 -5 -10 -15 100 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1232 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 -1.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 -2.0 V A ICBO Collector cut-off current VCB=-130V; IE=0 -50 IEBO Emitter cut-off current VEB=-3V; IC=0 -50 A hFE-1 DC current gain IC=-2A ; VCE=-5V 60 320 hFE-2 DC current gain IC=-5A ; VCE=-5V 40 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-1A ; VCE=-5V 60 MHz hFE-1 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1232 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
Price & Availability of 2SA1232
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |